elektronische bauelemente SSRF03N80SL 3a , 800v , r ds(on) 4.8 n-ch enhancement mode power mosfet 28-nov-2013 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ito - 220 rohs compliant product a suffix of -c specifies halogen free description the SSRF03N80SL is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 800 v gate-source voltage v gs 30 v t c =25c 3 a continuous drain current t c =100c i d 1.9 a pulsed drain current i dm 12 a t c =25c 39 total power dissipation derate above 25c p d 0.31 w single pulse avalanche energy 1 e as 173 mj operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 120 c / w maximum thermal resistance junction-case r jc 3.21 c / w notes: 1. l=30mh,i as =3.15a, v dd =100v, r g =25 , starting t j =25c 1 gate 3 source 2 drain a m j k l l g f b n d e c h millimeter millimeter ref. min. max. ref. min. max. a 14.60 16.50 h 2.70 4.00 b 9.50 10.50 j 0.90 1.50 c 12.60 14.0 0 k 0.50 0.95 d 4.30 5.10 l 2.34 2.7 4 e 2.3 0 3.2 m 2.4 0 3.60 f 2.3 0 3.10 n 3.0 3.4 g 0.30 0.75
elektronische bauelemente SSRF03N80SL 3a , 800v , r ds(on) 4.8 n-ch enhancement mode power mosfet 28-nov-2013 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 800 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 30v, v ds =0 drain-source leakage current i dss - - 1 a v ds =800v, v gs =0 static drain-source on-resistance r ds(on) - 3.8 4.8 v gs =10v, i d =1.5a total gate charge 1.2 q g - 9 - gate-source charge 1.2 q gs - 2.46 - gate-drain change 1.2 q gd - 3.74 - nc i d =3a v ds =640v v gs =10v turn-on delay time 1.2 t d(on) - 13.87 - rise time 1.2 t r - 30.53 - turn-off delay time 1.2 t d(off) - 22.40 - fall time 1.2 t f - 18.27 - ns v dd =400v i d =3a r g =25 input capacitance c iss - 390.3 - output capacitance c oss - 42.7 - reverse transfer capacitance c rss - 2 - pf v gs =0 v ds =25v f =1.0mhz gate resistance r g - 4.4 - f=1mhz,1vpp source-drain diode diode forward voltage v sd - - 1.4 v i s =3a, v gs =0 continuous source current i s - - 3 a pulsed source current i sm - - 12 a integral reverse p-n junction diode in the mosfet reverse recovery time 1. t rr - 437 - ns reverse recovery charge 1. q rr - 1.68 - c i s =3a,v gs =0, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente SSRF03N80SL 3a , 800v , r ds(on) 4.8 n-ch enhancement mode power mosfet 28-nov-2013 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSRF03N80SL 3a , 800v , r ds(on) 4.8 n-ch enhancement mode power mosfet 28-nov-2013 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSRF03N80SL 3a , 800v , r ds(on) 4.8 n-ch enhancement mode power mosfet 28-nov-2013 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical test curves
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